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Nanoscale mapping of intrinsic defects in single-layer graphene using tip-enhanced Raman spectroscopy
Weitao Su1, Naresh Kumar, Ning Dai
1Institute of Materials Physics, Hangzhou Dianzi University, 310018, Hangzhou, China. suweitao@hdu.edu.cn.
Abstract:
Non-gap mode tip-enhanced Raman spectroscopy (TERS) is used for the first time to successfully map the intrinsic defects in single-layer graphene with 20 nm spatial resolution. The nanoscale Raman mapping is enabled by an unprecedented near-field to far-field signal contrast of 8.5 at the Ag-coated TERS tip-apex. These results demonstrate the potential of TERS for characterisation of defects in single-layer graphene-based devices at the nanometre length-scale.
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