Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Area of Science:

• Materials Science
• Solid-State Physics
• Microscopy

Background:

• Extended defects (dislocations, grain boundaries) significantly impact semiconductor performance.
• The relationship between defect structure, band structure, and recombination behavior remains debated.
• Understanding these properties is crucial for microelectronic devices and semiconductor applications.

Purpose of the Study:

• To survey spatially resolved investigation procedures for extended defects in semiconductors using SEM.
• To provide representative examples for crystalline silicon.
• To compare the spatial resolution of different SEM-based techniques.

Main Methods:

• Cathodoluminescence (CL) for spectrally and spatially resolved luminescence behavior.
• Electron Beam Induced Current (EBIC) for studying electrical properties and defect distribution.
• Cross-correlation Electron Backscatter Diffraction (ccEBSD) for quantitative strain field determination.

Main Results:

• CL measurements are valuable for optical properties, requiring low temperatures (down to 5 K) for silicon.
• EBIC images reveal defect distribution via charge-carrier recombination.
• ccEBSD can quantify strain fields but requires careful sample preparation and high-quality diffraction patterns.

Conclusions:

• SEM-based techniques (CL, EBIC, ccEBSD) offer powerful tools for characterizing extended defects in semiconductors.
• Each technique provides complementary information on structural, optical, electrical, and strain properties.
• The choice of method depends on the specific properties to be investigated and the material system.