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Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta,

Du-Yeong Lee1, Tae-Hun Shim1, Jea-Gun Park1

  • 1MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul, 04763, Korea.

Nanotechnology
|June 14, 2016
PubMed

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