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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
1Department of Chemistry & Biochemistry, Texas Christian University, 2800 S. University Dr, Fort Worth, Texas, 76129.
This study uses topological analysis of the electron delocalization range function (EDR) to reveal chemical insights. Local maxima in the EDR, called attractors, identify electron delocalization in chemical systems.
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