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Conductivity fluctuations in proton-implanted ZnO microwires.

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  • 1Department of Physics, Ben Gurion University of the Negev, POB 653, 84105 Beer Sheva, Israel.

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|June 17, 2016
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Summary
This summary is machine-generated.

We characterized electrical noise in proton-implanted zinc oxide (ZnO) microwires. The low noise levels suggest ZnO is promising for nanoscale electronic and opto-spintronic devices.

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Nanotechnology

Background:

  • Electrical noise is a key limitation for nanoscale conducting elements.
  • Intrinsic electrical noise in zinc oxide (ZnO), a material relevant for opto-spintronics, remains largely uncharacterized.
  • Understanding noise in ZnO is crucial for advancing nanoscale electronic applications.

Purpose of the Study:

  • To investigate conductivity fluctuations and characterize electrical noise in proton-implanted ZnO microwires.
  • To assess the potential of ZnO for opto-spintronic applications by quantifying its intrinsic noise properties.
  • To explore the relationship between noise, carrier concentration, and material properties in ZnO.

Main Methods:

  • Fabrication of 10 nm thick ZnO current paths via proton implantation of microwires.
  • Measurement of voltage noise under constant DC current bias at room temperature.
  • Analysis of noise using power spectral density and comparison with the Hooge law.

Main Results:

  • Observed noise follows a power spectrum consistent with resistivity fluctuations.
  • Noise intensity scales with the square of the bias current.
  • Normalized power spectral density is inversely proportional to carrier concentration, aligning with the Hooge law.
  • Achieved a low normalized power spectral density of 2.5 x 10^-7 Hz^-1 at 1 Hz for proton-implanted ZnO.

Conclusions:

  • Proton-implanted ZnO microwires exhibit low intrinsic electrical noise.
  • The findings support the viability of ZnO for nanoscale opto-spintronic and electronic devices.
  • The study provides a quantitative understanding of noise mechanisms in ZnO relevant to its application potential.