Related Experiment Video
Updated: Mar 19, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Large reduction in thermal conductivity for SiGe alloy nanowire wrapped with a Ge nanoparticle-embedded SiO2 shell
Jong Woon Lee1,2, Junho Lee3, Su-Ho Jung1
1SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 440-746, Korea.
Abstract:
We demonstrate silicon germanium (SiGe) alloy nanowires (NWs) with Ge nanoparticles (GeNPs) embedded in a SiO2 shell as a material for decreasing thermal conductivity. During thermal oxidation of SiGe NWs to form SiGe-SiO2 core-shell structures, Ge atoms were diffused into the SiO2 shell to relax the strain in the SiGe core, and agglomerated as a few nanometer-sized particles. This structure leads to a large reduction in thermal conductivity due to the GeNP-phonon interaction, while electrical conductivity is sustained because the core of the SiGe alloy NW provides a current path for the charged carriers. The thermal conductivity of the SiGe alloy NWs wrapped with a GeNP-embedded SiO2 shell is 0.41 W m(-1) K(-1) at 300 K.
More Related Videos
09:20Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015