LaPtSb: a half-Heusler compound with high thermoelectric performance

Q Y Xue1, H J Liu, D D Fan

  • 1Key Laboratory of Artificial Micro - and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China. phlhj@whu.edu.cn.

Summary

This study reveals LaPtSb as a promising thermoelectric material with a high power factor and low thermal conductivity. Optimizing carrier concentration in n-type LaPtSb achieves a record thermoelectric figure of merit (ZT) of 2.2.

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