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Updated: Mar 18, 2026
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots
Kunook Chung1, Hyobin Yoo2, Jerome K Hyun3
1Department of Physics and Astronomy, Institute of Applied Physics, and Research Institute of Advanced Materials, Seoul National University, Seoul, 151-747, Korea.
Abstract:
The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light-emitting diodes (LEDs) using these microdisks is reported. An ELOG technique with only patterned graphene microdots is used, without any growth mask. The discrete micro-LED arrays are transferred onto Cu foil by a simple lift-off technique, which works reliably under various bending conditions.
