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Updated: Mar 18, 2026
Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries
Published on: April 22, 2013
Improved Photovoltaic Characteristics and Grain Boundary Potentials of CuIn0.7Ga0.3Se2 Thin Films Spin-Coated by
Ik Jin Choi1, Jin Woo Jang1, Bhaskar Chandra Mohanty2
1Department of Materials Science and Engineering, Yonsei University , Seoul 120-749, Korea.
Abstract:
This work introduces the incorporation of Na into the nontoxic precursor solution of CIGS to improve photovoltaic cell performance with the optimized benefits of Na. The extensive incorporation range of 0.05 to 0.5 mol % Na is used for the simple spin-coating process of high quality absorber thin films. A cell efficiency of ∼8.21%, which corresponds to an improvement of ∼10.2% compared to the reference sample, is achieved for the 0.25 mol % Na sample with enhanced open-circuit voltage and fill factor. The improvement was further analyzed as related to InCu defects and grain boundary potentials.
