Imperfections in Crystal Structure: Point, Line and Plane Defects
Imperfections in Crystal Structure: Stoichiometric Point Defects
Imperfections in Crystal Structure: Non-Stoichiometric Defects
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Updated: Mar 18, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Fei Long1, Poya Yasaei, Raj Sanoj
1Department of Mechanical Engineering and Engineering Mechanics, Michigan Technological University , Houghton, Michigan 49931, United States.
This study uses Kelvin probe force microscopy (KPFM) to differentiate graphene line defects like grain boundaries and wrinkles. The technique reveals unique work function variations, aiding defect identification and potential work function tuning.
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