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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Characteristics of MOSFET01:17

Characteristics of MOSFET

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
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Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
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G-Protein Gated Ion Channels01:21

G-Protein Gated Ion Channels

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GPCRs are primarily responsible for our sense of smell, taste, and vision.  The binding of a sensory stimulus activates GPCR to stimulate effector proteins, many of which are ion channels in the sensory organs. GPCRs modulate the opening and closing of the target ion channels either directly by binding them, or by releasing second messengers that activate these channels. As ions move across the membrane, the membrane potential is altered, which induces an appropriate response.
Sensory...
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Related Experiment Video

Updated: Mar 18, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

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A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity.

Fan Zhang1, Hanben Niu2

  • 1Key Laboratory of Optoelectronic Devices and Systems of Education Ministry and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China. zhangfan3@email.szu.edu.cn.

Sensors (Basel, Switzerland)
|July 2, 2016
PubMed
Summary
This summary is machine-generated.

Researchers developed an ultra-fast global shutter complementary metal-oxide-semiconductor (CMOS) image sensor. This sensor features adjustable shutter times down to 75 ps, enabling the observation of rapid phenomena.

Keywords:
CMOS image sensor (CIS)framing cameragated imagerhigh shutter efficiencylow parasitic light sensitivitysnapshot imagerultra-fast global shutter

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Area of Science:

  • * Electrical Engineering
  • * Materials Science
  • * Optics

Background:

  • * Complementary metal-oxide-semiconductor (CMOS) image sensors are crucial for digital imaging.
  • * Ultra-fast imaging requires sensors with precise timing and minimal light sensitivity.
  • * Existing sensors may struggle to capture non-repeatable, fast-evolving phenomena.

Purpose of the Study:

  • * To design and implement a global shutter CMOS image sensor with sub-nanosecond shutter times.
  • * To characterize the sensor's performance, including light sensitivity and noise.
  • * To demonstrate its potential for ultra-fast framing cameras.

Main Methods:

  • * Implemented a 40 × 48 pixel global shutter CMOS image sensor using a 0.5-μm mixed-signal CMOS process.
  • * Incorporated continuous contact rings for light shielding around photodiodes.
  • * Measured parasitic light sensitivity, random readout noise, and dynamic range.

Main Results:

  • * Achieved an adjustable shutter time as low as 75 picoseconds (ps).
  • * Measured parasitic light sensitivity of 1/8.5 × 10⁷ (405 nm) and 1/1.4 × 10⁴ (650 nm).
  • * Reported random readout noise of 217 e(-) rms and a dynamic range of 5500:1.

Conclusions:

  • * The developed gated CMOS image sensor (CIS) enables ultra-fast imaging.
  • * The sensor's performance is suitable for observing transient events.
  • * Potential applications include ultra-fast framing cameras for scientific research.