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A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity.
1Key Laboratory of Optoelectronic Devices and Systems of Education Ministry and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China. zhangfan3@email.szu.edu.cn.
Sensors (Basel, Switzerland)
|July 2, 2016
Summary
Researchers developed an ultra-fast global shutter complementary metal-oxide-semiconductor (CMOS) image sensor. This sensor features adjustable shutter times down to 75 ps, enabling the observation of rapid phenomena.
Area of Science:
- * Electrical Engineering
- * Materials Science
- * Optics
Background:
- * Complementary metal-oxide-semiconductor (CMOS) image sensors are crucial for digital imaging.
- * Ultra-fast imaging requires sensors with precise timing and minimal light sensitivity.
- * Existing sensors may struggle to capture non-repeatable, fast-evolving phenomena.
Purpose of the Study:
- * To design and implement a global shutter CMOS image sensor with sub-nanosecond shutter times.
- * To characterize the sensor's performance, including light sensitivity and noise.
- * To demonstrate its potential for ultra-fast framing cameras.
Main Methods:
- * Implemented a 40 × 48 pixel global shutter CMOS image sensor using a 0.5-μm mixed-signal CMOS process.
- * Incorporated continuous contact rings for light shielding around photodiodes.
- * Measured parasitic light sensitivity, random readout noise, and dynamic range.
Main Results:
- * Achieved an adjustable shutter time as low as 75 picoseconds (ps).
- * Measured parasitic light sensitivity of 1/8.5 × 10⁷ (405 nm) and 1/1.4 × 10⁴ (650 nm).
- * Reported random readout noise of 217 e(-) rms and a dynamic range of 5500:1.
Conclusions:
- * The developed gated CMOS image sensor (CIS) enables ultra-fast imaging.
- * The sensor's performance is suitable for observing transient events.
- * Potential applications include ultra-fast framing cameras for scientific research.
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