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Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
Hydrogen Doped Metal Oxide Semiconductors with Exceptional and Tunable Localized Surface Plasmon Resonances
Hefeng Cheng1, Meicheng Wen1, Xiangchao Ma
1Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University , 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.
Abstract:
Heavily doped semiconductors have recently emerged as a remarkable class of plasmonic alternative to conventional noble metals; however, controlled manipulation of their surface plasmon bands toward short wavelengths, especially in the visible light spectrum, still remains a challenge. Here we demonstrate that hydrogen doped given MoO3 and WO3 via a facile H-spillover approach, namely, hydrogen bronzes, exhibit strong localized surface plasmon resonances in the visible light region. Through variation of their stoichiometric compositions, tunable plasmon resonances could be observed in a wide range, which hinge upon the reduction temperatures, metal species, the nature and the size of metal oxide supports in the synthetic H2 reduction process as well as oxidation treatment in the postsynthetic process. Density functional theory calculations unravel that the intercalation of hydrogen atoms into the given host structures yields appreciable delocalized electrons, enabling their plasmonic properties. The plasmonic hybrids show potentials in heterogeneous catalysis, in which visible light irradiation enhanced catalytic performance toward p-nitrophenol reduction relative to dark condition. Our findings provide direct evidence for achieving plasmon resonances in hydrogen doped metal oxide semiconductors, and may allow large-scale applications with low-price and earth-abundant elements.

