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Published on: October 7, 2025
Communication: Charge-population based dispersion interactions for molecules and materials
Martin Stöhr1, Georg S Michelitsch2, John C Tully1
1Department of Chemistry, Yale University, New Haven, Connecticut 06520, USA.
We present a new method to calculate atomic C6 coefficients and polarizabilities using charge population analysis. This advances dispersion corrections in electronic structure calculations for broader applications.
Area of Science:
- Computational Chemistry
- Materials Science
Background:
- Accurate calculation of C6 coefficients and polarizabilities is crucial for modeling intermolecular interactions.
- Existing methods often rely on electron-density partitioning, limiting their applicability.
- Dispersion corrections are essential for describing van der Waals forces in electronic structure calculations.
Purpose of the Study:
- To develop a system-independent method for deriving effective atomic C6 coefficients and polarizabilities.
- To enable the use of dispersion-correction schemes with semi-empirical methods and tight-binding Hamiltonians.
- To assess the accuracy of the proposed method against established approaches.
Main Methods:
- Derivation of C6 coefficients and polarizabilities from charge population analysis.
- Integration of a many-body dispersion method with the semi-empirical density functional tight-binding (DFTB) method.
- Application to weakly bound molecular dimers, organic crystals, and supramolecular complexes.
Main Results:
- The proposed method accurately describes intermolecular C6 coefficients and dispersion energies.
- Achieved accuracy is comparable to electron-density partitioning-based methods.
- Demonstrated successful incorporation of many-body dispersion into DFTB.
Conclusions:
- The charge population analysis-based method provides a robust and versatile approach for dispersion corrections.
- The developed DFTB-based many-body dispersion method is suitable for studying complex systems like hybrid organic-inorganic interfaces.
- This work expands the applicability of dispersion-corrected electronic structure calculations to a wider range of methods and systems.
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