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Updated: Mar 18, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Two-dimensional lateral heterojunction through bandgap engineering of MoS2 via oxygen plasma
Nitin Choudhary1, Muhammad R Islam1,2, Narae Kang1,2
1NanoScience Technology Center, University of Central Florida, Orlando, FL 32816, USA.
Abstract:
The present study explores the structural, optical (photoluminescence (PL)), and electrical properties of lateral heterojunctions fabricated by selective exposure of mechanically exfoliated few layer two-dimensional (2D) molybdenum disulfide (MoS2) flakes under oxygen (O2)-plasma. Raman spectra of the plasma exposed MoS2 flakes show a significant loss in the structural quality due to lattice distortion and creation of oxygen-containing domains in comparison to the pristine part of the same flake. The PL mapping evidences the complete quenching of peak A and B consistent with a change in the exciton states of MoS2 after the plasma treatment, indicating a significant change in its band gap properties. The electrical transport measurements performed across the pristine and the plasma-exposed MoS2 flake exhibit a gate tunable current rectification behavior with a rectification ratio up to 1.3 × 10(3) due to the band-offset at the pristine and plasma-exposed MoS2 interface. Our Raman, PL, and electrical transport data confirm the formation of an excellent lateral heterojunction in 2D MoS2 through its bandgap modulation via oxygen plasma.
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