Cell imaging using GaInAsP semiconductor photoluminescence

We demonstrate label-free imaging of living cells using a GaInAsP semiconductor imaging plate. The photoluminescence (PL) intensity is changed by immersing the semiconductor wafer in different pH solutions and by depositing charged polyelectrolytes on the wafer. Various observations indicate that this phenomenon arises from the radiative and surface recombination rates modified by the Schottky barrier at the charged semiconductor surface. HeLa cancer cells were cultured on the semiconductor, and PL was observed using a near-infrared camera. The semiconductor areas with the cells attached exhibited characteristic PL profiles, which might reflect the attachment and surface condition of the cells, cellular matrix, and other substances.