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Quantitative temperature measurement of multi-layered semiconductor devices using spectroscopic thermoreflectance
Optics Express
|July 14, 2016
Summary
This study introduces a spectroscopic thermoreflectance microscopy system for accurate temperature measurement in microelectronic devices. The new method overcomes challenges with multi-layered semiconductors, enabling precise defect analysis.
Area of Science:
- Materials Science
- Semiconductor Physics
- Optical Metrology
Background:
- Thermoreflectance microscopy is crucial for analyzing local heating in microelectronic devices.
- Accurate temperature measurement in multi-layered semiconductors is challenging due to small thermoreflectance coefficients and optical interference.
Purpose of the Study:
- To develop an improved spectroscopic thermoreflectance microscopy system for quantitative temperature measurements.
- To address the challenges in measuring temperature in multi-layered semiconductor devices.
Main Methods:
- Implementation of a spectroscopic thermoreflectance microscopy system.
- Systematic approach for thermoreflectance coefficient calibration.
- Estimation of the effective coefficient κ for accurate thermal profiling.
Main Results:
- Demonstrated quantitative temperature profile measurement of physical defects.
- Successfully applied to thin-film polycrystalline silicon resistors.
- Validated the effectiveness of the spectroscopic approach for multi-layered devices.
Conclusions:
- The proposed spectroscopic thermoreflectance microscopy system enhances the accuracy of temperature measurements in complex semiconductor devices.
- This technique provides a reliable method for characterizing thermal behavior and defects in microelectronics.
