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A noise model for the evaluation of defect states in solar cells
G Landi1, C Barone2,3, C Mauro2,3
1Dipartimento di Ingegneria Industriale, Università di Salerno, I-84084 Fisciano, Salerno, Italy.
Abstract:
A theoretical model, combining trapping/detrapping and recombination mechanisms, is formulated to explain the origin of random current fluctuations in silicon-based solar cells. In this framework, the comparison between dark and photo-induced noise allows the determination of important electronic parameters of the defect states. A detailed analysis of the electric noise, at different temperatures and for different illumination levels, is reported for crystalline silicon-based solar cells, in the pristine form and after artificial degradation with high energy protons. The evolution of the dominating defect properties is studied through noise spectroscopy.
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