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Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene-hBN-Graphene Interlayer Tunnel

Sangwoo Kang1, Nitin Prasad1, Hema C P Movva1

  • 1Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.

Nano Letters
|July 15, 2016
PubMed

Keywords:
Interlayer tunnel FET (ITFET)band structuremultilayer graphenenegative differential resistance (NDR)resonant tunnelingstacking order

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