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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

Chemical approaches for doping nanodevice architectures.

John O'Connell¹, Subhajit Biswas, Ray Duffy

¹Department of Chemistry, University College Cork, Cork, Ireland. Tyndall National Institute, University College Cork, Cork, Ireland. AMBER@CRANN, Trinity College Dublin, Dublin 2, Ireland.

|July 16, 2016

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Advanced doping methods are crucial for semiconductor scaling. Monolayer doping offers precise control for silicon, germanium, and III-V nanostructures, overcoming limitations of older techniques.

Area of Science:

Materials Science
Semiconductor Physics
Nanotechnology

Background:

Continued scaling of semiconductor devices beyond the 14 nm node requires advanced doping technologies.
Conventional ion-beam implantation faces limitations with thin body and 3D device geometries.
Need for techniques offering precise dopant control, conformality, and minimal residues.

Purpose of the Study:

To critically assess recent developments in gas and solution phase doping techniques.
To evaluate methods for doping silicon, germanium, and III-V materials and nanostructures.
To achieve shallow diffusion depths, high carrier concentrations, and abrupt junctions.

Main Methods:

Review of spin-on doping limitations (residues, conformality).

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Last Updated: Mar 17, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

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Analysis of in situ doping challenges (concentration gradients, morphology).

Focus on monolayer doping for defect-free, conformal, and controllable doping.

Main Results:

Monolayer doping shows promise for silicon, germanium, and III-V compounds.
Gas and solution phase techniques are explored for nanostructure doping.
Challenges in metrology and surface chemistry for monolayer doping are identified.

Conclusions:

Monolayer doping satisfies key requirements for advanced semiconductor doping.
Further research needed to address metrology and surface chemistry challenges.
Gas and solution phase techniques are vital for next-generation semiconductor doping.