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Optical Blocking of Electron Tunneling into a Single Self-Assembled Quantum Dot
A Kurzmann1, B Merkel1, P A Labud2
1Fakultät für Physik and CENIDE, Universität Duisburg-Essen, Lotharstraße 1, Duisburg 47048, Germany.
Physical Review Letters
|July 16, 2016
Summary
Time-resolved resonance fluorescence reveals electron tunneling rates in quantum dots are independent of reservoir occupation. This finding, explained by optical blocking, contrasts with electrical transport measurements.
Area of Science:
- Quantum dot physics
- Optoelectronics
- Electron tunneling phenomena
Background:
- Electron tunneling is crucial for quantum dot devices.
- Understanding tunneling dynamics is key to controlling charge transport.
- Previous studies relied on electrical transport measurements.
Purpose of the Study:
- To investigate electron tunneling dynamics in a single quantum dot using time-resolved resonance fluorescence.
- To reconcile discrepancies between optical and electrical measurements of tunneling rates.
- To elucidate the role of optical processes in modulating electron tunneling.
Main Methods:
- Utilizing time-resolved resonance fluorescence (RF) spectroscopy.
- Analyzing RF intensity to determine quantum dot electron occupation.
- Employing a master equation approach incorporating tunneling and optical transitions.
Main Results:
- Resonance fluorescence intensity reflects average quantum dot occupation.
- Electron tunneling relaxation rate is independent of charge reservoir occupation.
- Optical blocking mechanism identified as responsible for the observed tunneling rate behavior.
- Discrepancy with all-electrical transport measurement results highlighted.
Conclusions:
- Time-resolved RF provides unique insights into quantum dot electron tunneling.
- Optical blocking significantly influences tunneling rates, especially when excitons are present.
- The study explains observed phenomena through a combined optical-electrical model.
