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Updated: Mar 17, 2026

Fabricating Nanogaps by Nanoskiving
Published on: May 13, 2013
Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory
Ajuan Cui1, Zhe Liu2, Huanli Dong3
1Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
Abstract:
Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive-switching behavior is identified in the nanogap electrodes, showing stable, robust performance and the multibit storage ability, demonstrating great potential in ultrahigh-density storage. The formation and dissolution of Si conductive filaments and migration of Au atoms is the mechanism behind the resistive switching.

