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Si1-x Ge x /Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing.

R J H Morris1,2, T P A Hase3, A M Sanchez3

  • 1University of Warwick, Gibbet Hill Road, Coventry, CV4 7AL, UK. r.morris@warwick.ac.uk.

Journal of the American Society for Mass Spectrometry
|July 23, 2016
PubMed
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Energy sequencing with ultra-low energy secondary ion mass spectrometry (uleSIMS) accurately profiles SiGe/Si interfaces. This method achieves sub-nanometer precision, matching high-resolution imaging techniques for reliable material analysis.

Area of Science:

  • Materials Science
  • Surface Science
  • Analytical Chemistry

Background:

  • Accurate interface profiling is crucial for semiconductor materials like Silicon-Germanium (SiGe) alloys.
  • Secondary Ion Mass Spectrometry (SIMS) is a powerful tool for depth profiling, but matrix effects can complicate analysis.
  • Ultra-low energy SIMS (uleSIMS) offers potential for high-resolution depth profiling.

Purpose of the Study:

  • To report the utility of energy sequencing for accurate matrix-level interface profiling using uleSIMS.
  • To determine the SiGe/Si interface profile with sub-nanometer precision.
  • To validate SIMS results against high-resolution imaging techniques.

Main Methods:

  • Utilized normally incident O2(+) ions over an energy range of 0.25-2.5 keV for SIMS analysis.
Keywords:
SIMSSi/Si1-x Ge xUltra low energy depth profiling

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  • Probed the Si0.73Ge0.27/Si interface.
  • Employed high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) for correlative imaging.
  • Linearized SIMS profiles by accounting for matrix effects on ion yield and erosion rate.
  • Developed a simultaneous fitting method for SIMS profiles acquired at different energies.

    • Main Results:

    • Achieved sub-nanometer precision in determining the intrinsic sample profile.
    • Demonstrated excellent agreement between the SIMS-derived interface and HAADF-STEM imaging.
    • Successfully linearized SIMS profiles by correcting for matrix effects.

    Conclusions:

    • Energy sequencing in uleSIMS is a valuable technique for accurate interface profiling.
    • The developed method overcomes matrix effects, enabling precise depth analysis.
    • Corroboration with HAADF-STEM validates the reliability of the uleSIMS approach for SiGe/Si interfaces.