Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of FET01:22

Biasing of FET

853
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
853
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

53
Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
53
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

974
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
974
Valence Bond Theory02:42

Valence Bond Theory

11.5K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
11.5K
Ferromagnetism01:31

Ferromagnetism

3.4K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
3.4K
Characteristics of MOSFET01:17

Characteristics of MOSFET

1.2K
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
1.2K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Selecting medical research data platforms for translational biomedical research: a five-tier overview and requirement-weighted assessment framework.

Frontiers in digital health·2026
Same author

Reentrant superconductivity at an oxide heterointerface.

Science advances·2026
Same author

Erratum: Peripheral Measurable Residual Disease Activity Assessment by MALDI-TOF Mass Spectrometry in Patients With Newly Diagnosed Multiple Myeloma in the Phase III GMMG-HD7 Trial.

Journal of clinical oncology : official journal of the American Society of Clinical Oncology·2026
Same author

High temperature Néel skyrmions in simple ferromagnets.

Nature communications·2026
Same author

Peripheral Measurable Residual Disease Activity Assessment by MALDI-TOF Mass Spectrometry in Patients With Newly Diagnosed Multiple Myeloma in the Phase III GMMG-HD7 Trial.

Journal of clinical oncology : official journal of the American Society of Clinical Oncology·2026
Same author

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Electrospun Liquid Crystal Elastomers as Stress-Free Thermo- and Photoresponsive Actuators.

ACS applied materials & interfaces·2026
Same journal

Tunable Electrical Transport and Magnetic Anisotropy in Textured SrRuO<sub>3</sub> Films Mediated by Gap Control of Monolayer Ca<sub>2</sub>Nb<sub>3</sub>O<sub>10</sub> Nanosheet Templates.

ACS applied materials & interfaces·2026
Same journal

Label-Free Capacitive Immunosensing of Lactate Dehydrogenase and Interleukin-6 Using a Protein-Passivated Graphene Interface.

ACS applied materials & interfaces·2026
Same journal

Improved Carrier Transport and Enhanced Detection Sensitivity Through Zr<sup>4+</sup> Doping in LiYMo<sub>2</sub>O<sub>8</sub> Single Crystals for X-ray Detectors.

ACS applied materials & interfaces·2026
Same journal

Near-Infrared Light-Driven Microgrooved UCNPs/Azobenzene-LCE Actuators and Substrates for Cardiomyoblast Alignment.

ACS applied materials & interfaces·2026
Same journal

Recent Advances in Superlattice-Based Thermoelectrics.

ACS applied materials & interfaces·2026
See all related articles

Related Experiment Video

Updated: Mar 17, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.7K

Toward Versatile Sr2FeMoO6-Based Spintronics by Exploiting Nanoscale Defects.

Minnamari Saloaro1, Martin Hoffmann2,3,4, Waheed A Adeagbo3

  • 1Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku , Turku FI-20014, Finland.

ACS Applied Materials & Interfaces
|July 23, 2016
PubMed
Summary
This summary is machine-generated.

This study explores optimizing strontium iron molybdate (Sr2FeMoO6) thin films for spintronics. Strain enhances lattice stability, reducing defects and improving magnetic properties for advanced applications.

Keywords:
SFMOantisite disorderfirst-principlesmagnetic propertiesnanoscale defectsoxygen vacancyspintronicsstrain

More Related Videos

Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

10.5K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.4K

Related Experiment Videos

Last Updated: Mar 17, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.7K
Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

10.5K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.4K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Spintronics

Background:

  • Complex magnetic oxides are crucial for spintronic applications.
  • Strontium iron molybdate (Sr2FeMoO6) shows promise but lacks optimal thin film synthesis.
  • Preserving magnetic properties in Sr2FeMoO6 thin films is a key challenge.

Purpose of the Study:

  • To investigate the relationship between lattice strain, defects, and magnetic/half-metallic properties in Sr2FeMoO6 thin films.
  • To identify pathways for optimizing Sr2FeMoO6 thin films for spintronic applications.

Main Methods:

  • Comprehensive experimental and theoretical analysis.
  • Investigating the effects of lattice strain, Fe-Mo antisite disorder, and oxygen vacancies.
  • Correlating material properties with synthesis conditions.

Main Results:

  • Lattice strain has a minimal intrinsic effect on magnetic properties.
  • Increased strain significantly stabilizes the Sr2FeMoO6 lattice against defect formation (antisite disorder, oxygen vacancies).
  • Defects non-linearly impact the magnetism of Sr2FeMoO6.

Conclusions:

  • Strain manipulation is a viable strategy to improve Sr2FeMoO6 thin film quality.
  • Reductive annealing offers another pathway to enhance spintronic functionality.
  • Optimized Sr2FeMoO6 thin films hold potential for advanced spintronic devices.