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Updated: Mar 17, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Jonathan H Prechtel1, Andreas V Kuhlmann1, Julien Houel1,2
1Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
Hole spins in InGaAs quantum dots offer a low-noise qubit platform, circumventing nuclear spin noise. This research demonstrates microsecond dephasing times, ideal for quantum computing applications.
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