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Patterning of Solid Films via Selective Atomic Layer Deposition Based on Silylation and UV/Ozonolysis
Lei Guo1, Ilkeun Lee1, Francisco Zaera1
1Department of Chemistry, University of California , Riverside, California 92521, United States.
ACS Applied Materials & Interfaces
|July 26, 2016
Summary
This study demonstrates a novel nanoscale patterning method for silicon wafers using selective surface chemistry and atomic layer deposition (ALD). The technique achieves high-resolution patterning with excellent film growth control on silicon oxide surfaces.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Chemistry
Background:
- Atomic layer deposition (ALD) is crucial for thin-film fabrication.
- Precise nanoscale patterning of silicon wafers is essential for advanced semiconductor devices.
- Existing selective ALD methods often struggle with high discrimination and resolution.
Purpose of the Study:
- To develop a simple and effective methodology for nanoscale patterning of silicon wafers.
- To achieve high lateral resolution and monolayer control in surface patterning.
- To demonstrate a selective ALD process with absolute inhibition of film growth on patterned areas.
Main Methods:
- Utilizing selective surface chemistry involving silylation of nucleation sites on silicon oxide surfaces.
- Employing a mask, ultraviolet radiation, and ozonolysis to selectively remove the silylation agent.
- Performing subsequent atomic layer deposition (ALD) on the re-exposed areas for selective film growth.
Main Results:
- Successfully demonstrated nanoscale patterning of silicon wafers with monolayer control.
- Achieved lateral resolution on the order of a few tens of nanometers.
- Showcased absolute inhibition of film growth on silylated areas and controlled deposition on re-exposed sectors.
Conclusions:
- The developed methodology offers a straightforward approach for nanoscale patterning of oxide surfaces.
- The technique provides precise control over film growth and high lateral resolution.
- The approach is versatile and potentially extendable to various ALD processes and materials.
