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Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN

M A Negara1, M Kitano1, R D Long1

  • 1Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.

ACS Applied Materials & Interfaces
|July 27, 2016
PubMed

Keywords:
GaNatomic layer depositioninterface trap densitymetal oxide semiconductornegative fixed chargenitrogen incorporation

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