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Published on: July 18, 2014
Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers
Mingqing Qian1, Dan Shan1, Yang Ji1
1National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Hankou Road 22, Nanjing City, Jiangsu Province, 210093, China.
Abstract:
High-conductive phosphorus-doped Si nanocrystals/SiO2(nc-Si/SiO2) multilayers are obtained, and the formation of Si nanocrystals with the average crystal size of 6 nm is confirmed by high-resolution transmission electron microscopy and Raman spectra. The temperature-dependent carrier transport behaviors of the nc-Si/SiO2 films are systematically studied by which we find the shift of Fermi level on account of the changing P doping concentration. By controlling the P doping concentration in the films, the room temperature conductivity can be enhanced by seven orders of magnitude than the un-doped sample, reaching values up to 110 S/cm for heavily doped sample. The changes from Mott variable-range hopping process to thermally activation conduction process with the temperature are identified and discussed.
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