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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Structure, Energetics, and Dynamics of Screw Dislocations in Even n-Alkane Crystals

Isabel A Olson1, Alexander G Shtukenberg1, Gagik Hakobyan1

  • 1Department of Chemistry and Molecular Design Institute, New York University , New York City, New York 10003, United States.

The Journal of Physical Chemistry Letters
|August 2, 2016
PubMed

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