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Gate-Tunable Spatial Modulation of Localized Plasmon Resonances.

Andrea Arcangeli¹, Francesco Rossella¹, Andrea Tomadin¹

¹NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR , Piazza san Silvestro 12, I-56127 Pisa, Italy.

|August 2, 2016

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Scientists achieved spatial control over plasmon resonance in semiconductor nanostructures using field-effect tuning. This breakthrough in nanophotonics enables precise manipulation of light at the nanoscale for advanced optoelectronic devices.

Area of Science:

Nanophotonics and Plasmonics
Semiconductor Nanostructures
Mid-Infrared Optics

Background:

Plasmon resonance in semiconductor nanostructures is crucial for optoelectronic applications.
Controlling plasmonic properties spatially and with external fields remains a significant challenge.
Indium arsenide (InAs) nanowires offer a tunable platform for exploring plasmonic phenomena.

Purpose of the Study:

To demonstrate the spatial localization and field-effect control of plasmon resonance.
To investigate the modulation of free carrier density in InAs nanowires for plasmonic tuning.
To explore the potential of electrically tunable nanoplasmonic architectures for novel devices.

Main Methods:

Utilized scattering-type scanning near-field optical microscopy (s-SNOM) in the mid-infrared region.

Keywords:

Plasmonics doping engineering field-effect near-field optical microscopy secmiconductor nanowire sensors

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Employed InAs nanowires with a graded doping profile to vary carrier density axially.

Applied a back-gate bias voltage to modulate the free carrier density and plasmon resonance.

Main Results:

Achieved a spatial resolution of 20 nm in near-field measurements.
Demonstrated a localized resonant feature whose position is controllable via back-gate voltage.
Observed a spatial shift of the plasmon resonance by approximately 100 nm due to field-effect tuning.

Conclusions:

Successfully demonstrated field-effect spatial control of plasmon resonance in semiconductor nanostructures.
The graded doping profile in InAs nanowires enables precise modulation of carrier density.
Electrically tunable nanoplasmonic architectures hold significant promise for future optoelectronic device innovation.