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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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Flexible Nanoporous WO3-x Nonvolatile Memory Device.

Yongsung Ji, Yang Yang, Seoung-Ki Lee

¹Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology , Joellabuk-do 565-905, Republic of Korea.

|August 3, 2016

Summary

This study presents a flexible nanoporous tungsten oxide (WO3-x) resistive random access memory (RRAM) device fabricated at room temperature. The developed RRAM demonstrates excellent performance and durability for flexible electronics applications.

Keywords:

WO3−x memory flexible memory nanoporous resistive random access memory

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Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Flexible resistive random access memory (RRAM) is crucial for next-generation nonvolatile memory.
High-temperature processing for active layer films limits RRAM fabrication on flexible substrates.

Purpose of the Study:

To develop a flexible RRAM device using a room-temperature fabrication process.
To investigate the performance and reliability of nanoporous WO3-x based RRAM.

Main Methods:

Fabrication of flexible nanoporous (NP) WO3-x RRAM devices via anodic treatment at room temperature.
Characterization of electrical switching characteristics, retention, uniformity, and bending endurance.

Main Results:

The flexible NP WO3-x RRAM device exhibited bipolar switching with a high ON/OFF current ratio (ION/IOFF) of approximately 10^5.
The device demonstrated stable data retention exceeding 5 x 10^5 seconds.
Exceptional cell-to-cell uniformity and robust bending endurance (over 10^3 cycles) were achieved.

Conclusions:

Room-temperature anodic treatment enables the fabrication of high-performance flexible WO3-x RRAM.
The developed flexible RRAM exhibits promising characteristics for durable and reliable nonvolatile memory applications.