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Lévy Flights due to Anisotropic Disorder in Graphene
S Gattenlöhner1, I V Gornyi2,3,4, P M Ostrovsky5,6
1Radboud University, Institute for Molecules and Materials, NL-6525 AJ Nijmegen, The Netherlands.
Physical Review Letters
|August 6, 2016
Summary
This study reveals that anisotropic impurity distribution in graphene creates stripe states, enhancing conductivity via Lévy-flight transport. This contrasts with random impurities, which cause Anderson localization.
Area of Science:
- Condensed matter physics
- Materials science
- Nanotechnology
Background:
- Graphene's unique electronic properties are sensitive to disorder.
- On-site impurities (adatoms) can drastically alter graphene's conductivity.
- Random impurity distributions typically lead to Anderson localization, reducing conductivity.
Purpose of the Study:
- To investigate the impact of anisotropic impurity distribution on graphene's transport properties.
- To explore the formation of novel electronic states and transport regimes.
- To contrast the effects of anisotropic versus random impurity placement.
Main Methods:
- Numerical simulations using the Kwant code.
- Analytical theory employing the self-consistent T-matrix approximation.
- Modeling anisotropic on-site impurity placement on graphene lattices.
Main Results:
- Formation of stripe states with suppressed backscattering along impurity lines.
- Observation of Lévy-flight transport in the stripe direction.
- Conductivity enhancement proportional to the square root of system length in the stripe direction.
Conclusions:
- Anisotropic impurity distribution can significantly enhance graphene conductivity near the Dirac point.
- This enhancement is attributed to stripe states and Lévy-flight transport.
- Controlled impurity placement offers a route to engineer graphene's electronic properties, unlike random disorder.
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