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Published on: January 19, 2018
Topological spin and valley pumping in silicene
Wei Luo1, L Sheng1,2, B G Wang1,2
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, China.
We demonstrate adiabatic topological spin and valley pumping in silicene using electric fields. This method generates low-noise currents for spintronic and valleytronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Phenomena
Background:
- Topological insulators exhibit unique electronic properties.
- Spintronics and valleytronics aim to utilize electron spin and valley degrees of freedom.
- Silicene, a silicon allotrope, offers potential for novel electronic applications.
Purpose of the Study:
- To propose and theoretically investigate adiabatic topological spin and valley pumping in silicene.
- To explore the control of spin and valley currents using electric fields.
- To establish the general nature of bulk topological pumping in 2D topological insulators.
Main Methods:
- Modulation of silicene with in-plane and vertical AC/DC electric fields.
- Theoretical analysis of spin and valley current generation.
- Tuning electric field parameters to achieve specific pumping effects.
Main Results:
- Achieved adiabatic topological valley pumping and spin-valley pumping by tuning electric fields.
- Demonstrated generation of low-noise spin and valley currents.
- Showcased that bulk topological pumping is independent of edge state physics.
Conclusions:
- Adiabatic topological pumping is feasible in silicene using electric field control.
- The generated currents hold promise for advanced spintronic and valleytronic devices.
- Bulk topological pumping is a fundamental property of 2D topological insulators.
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