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Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
Published on: February 10, 2014
Contact Resistance Effects in Highly Doped Organic Electrochemical Transistors
Vikash Kaphle1, Shiyi Liu1, Akram Al-Shadeedi1
1Department of Physics, Kent State University, Kent, OH, 44242, USA.
Abstract:
Injection at the source contact critically determines the behavior of depletion-type organic electrochemical transistors (OETs). The contact resistance of OETs increases exponentially with the gate voltage and strongly influences the modulation of the drain current by the gate voltage over a wide voltage range. A modified standard model accounting contact resistance can explain the particular shape of the transconductance.
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