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Fabrication of Multilayer Borophene on Insulator Structure
Hsu-Sheng Tsai1, Ching-Hung Hsiao2, Yu-Pin Lin3
1Institute of Nuclear Engineering and Science, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan, 30013, R. O. C.. b91520016@yahoo.com.tw.
Abstract:
The X-ray photoelectron spectroscopy spectra indicate the peak of BB bonds, implying that the elemental boron structure might be formed after the process. The multilayer β-borophene is directly observed by transmission electron microscopy (TEM) and the lattice parameters are valid. The middle SiNx layer also can be identified in TEM image. Furthermore, the 1.61 eV bandgap of the multilayer β-borophene is announced in this study.
