High-Temperature Quantum Anomalous Hall Effect in n-p Codoped Topological Insulators

Area of Science:

• Condensed Matter Physics
• Quantum Transport Phenomena

Background:

• The quantum anomalous Hall effect (QAHE) is crucial for dissipationless quantum electronics.
• Existing QAHE realizations are limited to very low temperatures.

Purpose of the Study:

• To develop a novel method for achieving QAHE at higher temperatures.
• To demonstrate a new kinetic pathway for high-temperature QAHE.

Main Methods:

• Utilizing n-p codoping in three-dimensional topological insulators.
• Numerical demonstration using vanadium-iodine (V-I) codoped Sb_{2}Te_{3}.

Main Results:

• Achieved quantized Hall conductance at temperatures up to 50K.
• Observed QAHE at low V and I doping concentrations (∼2% V, ∼1% I).
• High-temperature QAHE is attributed to preserved band gap from compensated doping.

Conclusions:

• The n-p codoping strategy offers a viable route to high-temperature QAHE.
• This approach significantly advances the potential for practical quantum electronic devices.
• The method is conceptually general and applicable to other topological insulator systems.