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Nanoscale Internal Fields in a Biased Graphene-Insulator-Semiconductor Structure
Sylvie Rangan, Malathi Kalyanikar1, Junxi Duan
1Department of Chemistry and Chemical Biology, Rutgers University , 610 Taylor Road, Piscataway, New Jersey 08854, United States.
The Journal of Physical Chemistry Letters
|August 18, 2016
Summary
Researchers developed a new method to directly measure nanoscale electric fields in layered materials. This technique reveals how interfaces critically influence the potential profile, crucial for advancing novel electronic devices.
Area of Science:
- Condensed matter physics
- Materials science
- Nanotechnology
Background:
- Accurate characterization of nanoscale electric fields in multilayered materials is crucial for novel device development.
- Bulk material properties are insufficient for describing electronic behavior at the nanoscale; interfacial effects are critical.
Purpose of the Study:
- To propose and demonstrate a general approach for direct measurement of internal electric fields at the nanoscale.
- To experimentally determine the potential profile across a layered material system, including interfaces.
Main Methods:
- Utilized small spot X-ray photoemission spectroscopy (XPS).
- Performed measurements on a biased graphene/SiO2/Si heterostructure.
- Reconstructed the potential profile using core-level shifts as a function of depth.
Main Results:
- Successfully mapped the potential profile across the graphene/SiO2/Si stack.
- Observed and quantified potential discontinuities at each interface.
- Demonstrated the critical role of each interface in shaping the overall potential distribution.
Conclusions:
- The developed method enables direct measurement of nanoscale internal electric fields.
- Interfacial properties significantly impact the electronic potential in multilayered systems.
- Understanding these interfacial effects is essential for designing advanced nanoscale electronic devices.
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