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Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Low-Pressure Vapor-Assisted Solution Process for Thiocyanate-Based Pseudohalide Perovskite Solar Cells
Yu-Hsien Chiang1, Hsin-Min Cheng1, Ming-Hsien Li1
1Department of Photonics, National Cheng Kung University, Tainan, 701, Taiwan.
Abstract:
In this report, we fabricated thiocyanate-based perovskite solar cells with low-pressure vapor-assisted solution process (LP-VASP) method. Photovoltaic performances are evaluated with detailed materials characterizations. Scanning electron microscopy images show that SCN-based perovskite films fabricated using LP-VASP have long-range uniform morphology and large grain sizes up to 1 μm. The XRD and Raman spectra were employed to observe the characteristic peaks for both SCN-based and pure CH3 NH3 PbI3 perovskite. We observed that the Pb(SCN)2 film transformed to PbI2 before the formation of perovskite film. X-ray photoemission spectra (XPS) show that only a small amount of S remained in the film. Using LP-VASP method, we fabricated SCN-based perovskite solar cells and achieved a power conversion efficiency of 12.72 %. It is worth noting that the price of Pb(SCN)2 is only 4 % of PbI2 . These results demonstrate that pseudo-halide perovskites are promising materials for fabricating low-cost perovskite solar cells.

