Contacting ZnO Individual Crystal Facets by Direct Write Lithography

Area of Science:

• Materials Science
• Nanotechnology
• Surface Science

Background:

• Advanced electronic devices utilize properties of submicrometer crystal facets.
• Investigating facet-dependent properties (e.g., piezoelectricity in ZnO) requires electrical contacts to individual facets.
• A lithography method for contacting submicrometer crystal facets was previously unavailable.

Purpose of the Study:

• To demonstrate and evaluate electron beam-induced deposition (EBID) for contacting individual crystal facets.
• To investigate EBID proximity effects and optimize parameters for insulated contact lines.
• To create prototype devices for studying facet-dependent properties.

Main Methods:

• Utilized electron beam-induced deposition (EBID) within an electron microscope to contact ZnO pillars.
• Correlated in situ deposition, structural, and electrical data.
• Investigated parameters like beam energy, geometry, and facet size to minimize proximity effects.

Main Results:

• EBID successfully created electrical contacts on individual submicrometer ZnO crystal facets.
• Proximity effects during EBID were analyzed and minimized.
• Prototype devices were fabricated, demonstrating EBID's flexibility and resolution.

Conclusions:

• EBID is a viable direct write lithography method for contacting individual submicrometer crystal facets.
• The developed method enables the study of facet-dependent properties, such as mechanical stress effects on ZnO.
• This technique opens possibilities for fabricating novel micro/nanoelectronic devices.