Related Experiment Video
Updated: Mar 16, 2026
11:21
Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
Published on: March 21, 2018
8.6K
Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures
Kleopatra Emmanouil Aretouli1,2, Dimitra Tsoutsou1, Polychronis Tsipas1
1Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece.
ACS Applied Materials & Interfaces
|August 19, 2016
Summary
High-quality tin selenide/tungsten diselenide van der Waals heterostructures were grown for advanced electronic devices. This unique material alignment is suitable for fabricating nearly broken gap tunneling field effect transistors (TFETs).
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Van der Waals (vdW) heterostructures, formed from 2D semiconductor materials, are crucial for developing novel optoelectronic devices.
- Tunneling field effect transistors (TFETs) represent a key application area for these advanced heterostructures.
Purpose of the Study:
- To grow high-quality SnSe2/WSe2 vdW heterostructures.
- To investigate the suitability of these heterostructures for fabricating (nearly) broken gap TFETs.
Main Methods:
- Growth of SnSe2/WSe2 vdW heterostructures using molecular beam epitaxy.
- Utilized AlN(0001)/Si(111) substrates with a Bi2Se3 buffer layer for high-quality material synthesis.
Main Results:
- Successfully grew high-quality SnSe2/WSe2 vdW heterostructures.
- Determined a valence band offset of 0.8 eV, aligning the valence band edge of WSe2 with the conduction band edge of SnSe2.
- Demonstrated band alignment suitable for (nearly) broken gap TFETs.
Conclusions:
- The developed SnSe2/WSe2 vdW heterostructure is a promising material system for next-generation TFETs.
- The specific band alignment achieved is critical for enabling efficient tunneling in these devices.
