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Tunable Electrical Performance of Few-Layered Black Phosphorus by Strain
Hongrong Wu1, Xiaofei Liu1, Jun Yin1
1State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
Abstract:
Strain engineering shows promising applications in low-dimensional materials. It is demonstrated that the bandgap of few-layered black phosphorus can be effectively reduced by out-of-plane compressive strain, resulting in a significant modulation of the vertical electrical performance of black phosphorus and even inducing a nonlinear current-voltage curve to linear current-voltage curve transition.
