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Related Concept Videos

Semiconductors01:22

Semiconductors

1.8K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.8K
Types of Semiconductors01:20

Types of Semiconductors

1.7K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.7K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

761
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
761
MOSFET01:16

MOSFET

1.6K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.6K
Carrier Transport01:21

Carrier Transport

1.1K
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
1.1K

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Technology Roadmaps for Compound Semiconductors.

H S Bennett1

  • 1National Institute of Standards and Technology, Gaithersburg, MD 20899-8120.

Journal of Research of the National Institute of Standards and Technology
|August 24, 2016
PubMed
Summary
This summary is machine-generated.

This study compares compound semiconductor roles in technology roadmaps against Si CMOS trends. It highlights material and device needs for applications like high-speed internet, suggesting actions for an International Technology Roadmap for Compound Semiconductors (ITRCS).

Keywords:
analog to digital converterscompound semiconductorsdigital video systemstechnology roadmapswireless communications

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Area of Science:

  • Materials Science and Engineering
  • Electrical Engineering
  • Semiconductor Technology

Background:

  • Compound semiconductors play a crucial role in advanced electronic and optoelectronic applications.
  • Existing technology roadmaps from various industry initiatives outline the future of semiconductor development.
  • The Si CMOS industry presents a significant benchmark for technological advancement and market trends.

Purpose of the Study:

  • To discuss and compare the roles of compound semiconductors as presented in public technology roadmaps.
  • To analyze how these roadmaps address compound semiconductors at material processing and device levels for specific applications.
  • To propose actions and methods for developing an International Technology Roadmap for Compound Semiconductors (ITRCS).

Main Methods:

  • Comparative analysis of compound semiconductor roles across multiple industry technology roadmaps.
  • Examination of specific applications, such as optical communications, to link information demand to semiconductor requirements.
  • Discussion of technical challenges and economic opportunities in high-quality digital video delivery.

Main Results:

  • Identified specific requirements for compound semiconductor devices (e.g., InP HBTs, HEMTs) driven by application demands like 100 Mbit/s home data delivery.
  • Assessed the extent to which current roadmaps detail compound semiconductor materials processing and device fabrication.
  • Highlighted the critical need for industry leader response in realizing the value of an ITRCS.

Conclusions:

  • The value of an International Technology Roadmap for Compound Semiconductors (ITRCS) is contingent upon industry adoption and action.
  • Technical and economic factors in delivering high-quality digital video exemplify areas for applying proposed roadmap strategies.
  • Further development of compound semiconductor roadmapping is essential to meet future technological demands.