Eu-doped Si-SiO2 core-shell nanowires for Si-compatible red emission

Area of Science:

• Materials Science
• Nanotechnology
• Optoelectronics

Background:

• The indirect bandgap of silicon hinders integration with photonics for optical information processing.
• Developing silicon-compatible light-emitting materials is crucial for future integrated nanophotonics.

Purpose of the Study:

• To synthesize and characterize europium (Eu)-doped Si-SiO2 core-shell nanowires for silicon photonics.
• To investigate the effect of Eu concentration on luminescence efficiency and explore relaxation mechanisms.

Main Methods:

• Oxide-assisted chemical vapor deposition (CVD) for synthesizing Eu-doped Si-SiO2 core-shell nanowires.
• Systematic variation of SiO2 shell thickness to control Eu concentration.
• Photoluminescence spectroscopy and time-resolved lifetime measurements to analyze emission properties.

Main Results:

• Successfully grew Eu-doped Si-SiO2 core-shell nanowires with enhanced Eu concentration via SiO2 shell thickness.
• Observed strong, silicon-compatible red emission from Eu(3+) ions under laser illumination.
• Determined optimal Eu concentration for highest emission efficiency at approximately 0.8 at%.
• Analyzed luminescence relaxation mechanisms through lifetime measurements.

Conclusions:

• Eu-doped Si-SiO2 core-shell nanowires demonstrate promising Si-compatible red light emission.
• These nanowires are suitable for integrated nanophotonics applications due to their strong emission and nanoscale properties.