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Updated: Mar 15, 2026

High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia YSZ Scaffolds by In Situ Carbon Templating Xerogels
Published on: April 16, 2017
The separation of grain and grain boundary impedance in thin yttria stabilized zirconia (YSZ) layers
M Gerstl1, E Navickas2, G Friedbacher1
1Institute of Chemical Technologies and Analytics, Vienna University of Technology, Getreidemarkt 9-164/EC, 1060 Vienna, Austria.
Abstract:
An improved electrode geometry is proposed to study thin ion conducting films by impedance spectroscopy. It is shown that long, thin, and closely spaced electrodes arranged interdigitally allow a separation of grain and grain boundary effects also in very thin films. This separation is shown to be successful for yttria stabilized zirconia (YSZ) layers thinner than 20 nm. In a series of experiments it is demonstrated that the extracted parameters correspond to the YSZ grain boundary and grain bulk resistances or to grain boundary and substrate capacitances. Results also show that our YSZ films produced by pulsed-laser deposition (PLD) on sapphire substrates exhibit a bulk conductivity which is very close to that of macroscopic YSZ samples.
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