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Updated: Mar 15, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure
Heng-Jui Liu1,2, Jheng-Cyuan Lin3, Yue-Wen Fang4
1Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan.
Abstract:
A novel artificially created MnO2 monolayer system is demonstrated in atomically controlled epitaxial perovskite heterostructures. With careful design of different electrostatic boundary conditions, a magnetic transition as well as a metal-insulator transition of the MnO2 monolayer is unveiled, providing a fundamental understanding of dimensionality-confined strongly correlated electron systems and a direction to design new electronic devices.
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