Related Experiment Video
Updated: Mar 15, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
AC-Impedance Spectroscopic Analysis on the Charge Transport in CVD-Grown Graphene Devices with Chemically Modified
Bok Ki Min1,2, Seong K Kim1, Seong Ho Kim1
1Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT) , Yuseong, Daejeon 305-600, Republic of Korea.
Abstract:
A comprehensive study for the effect of interfacial buffer layers on the electrical transport behavior in CVD-grown graphene based devices has been performed by ac-impedance spectroscopy (IS) analysis. We examine the effects of the trap charges at graphene/SiO2 interface on the total capacitance by introducing self-assembled monolayers (SAMs). Furthermore, the charge transports in the polycrystalline graphene are characterized through the temperature-dependent IS measurement, which can be explained by the potential barrier model. The frequency-dependent conduction reveals that the conductivity of graphene is related with the mobility, which is limited by the scattering caused by charged adsorbates on SiO2 surface.

