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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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A Study on Reducing Contact Resistance in Solution-Processed Organic Field-Effect Transistors.

Sangmoo Choi1, Canek Fuentes-Hernandez1, Cheng-Yin Wang1

  • 1Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0250, United States.

ACS Applied Materials & Interfaces
|September 1, 2016
PubMed
Summary

Researchers reduced contact resistance in organic transistors using modified gold electrodes. Strategies involving molybdenum tris-[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd)3) or MoO3 showed improved performance over pentafluorothiophenol (PFBT) treatments.

Keywords:
Fermi-level pinningTIPS-pentacene/PTAAcontact dopingcontact resistancemolybdenum trioxidemolybdenum tris-[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene]organic field-effect transistorstop-gate geometry

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Area of Science:

  • Organic electronics
  • Materials science
  • Semiconductor device physics

Background:

  • Solution-processed organic field-effect transistors (OFETs) are promising for flexible electronics.
  • High contact resistance at the electrode-semiconductor interface is a major performance limitation.
  • TIPS-pentacene and PTAA are commonly used organic semiconductors.

Purpose of the Study:

  • To investigate methods for reducing contact resistance in TIPS-pentacene and PTAA based OFETs.
  • To compare the effectiveness of different contact modification strategies on device performance.
  • To elucidate the mechanisms behind contact resistance reduction.

Main Methods:

  • Fabrication of top-gate, bottom-contact OFETs using TIPS-pentacene and PTAA.
  • Modification of gold source/drain electrodes with 2,3,4,5,6-pentafluorothiophenol (PFBT), Mo(tfd)3, or MoO3.
  • Electrical characterization of the fabricated OFETs to determine contact resistance.

Main Results:

  • Devices modified with Mo(tfd)3 or MoO3 exhibited significantly lower contact resistance compared to those modified with PFBT.
  • Improved device performance, indicated by lower contact resistance, was observed with Mo(tfd)3 and MoO3 modifications.
  • Analysis suggests work function modulation, mitigation of Fermi-level pinning, and electrical doping contribute to reduced resistance.

Conclusions:

  • Contact modification of gold electrodes with Mo(tfd)3 or MoO3 is an effective strategy to reduce contact resistance in organic transistors.
  • These methods offer a pathway to enhance the performance of solution-processed OFETs.
  • Understanding the interplay between electrode modification and semiconductor doping is crucial for future device optimization.