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Single-Walled Carbon-Nanotubes-Based Organic Memory Structures.

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  • 1School of Electronic Engineering, Bangor University, Dean Street, Bangor LL57 1UT, UK. s.j.fakher@bangor.ac.uk.

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Summary

Single-walled carbon nanotubes (SWCNTs) enable reliable organic memory devices with large memory windows. These SWCNT-based metal-insulator-semiconductor and thin-film transistor structures demonstrate efficient charge storage and low leakage for memory applications.

Keywords:
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Area of Science:

  • Organic electronics
  • Nanotechnology
  • Materials science

Background:

  • Organic memory devices offer potential for flexible and low-cost electronics.
  • Single-walled carbon nanotubes (SWCNTs) possess unique electrical properties suitable for electronic components.
  • Metal-insulator-semiconductor (MIS) and thin-film transistor (TFT) architectures are common for memory applications.

Purpose of the Study:

  • To investigate the electrical behavior of organic memory structures utilizing SWCNTs.
  • To evaluate the performance of SWCNT-based MIS and TFT devices for memory applications.
  • To demonstrate the feasibility of using SWCNTs as floating gates in organic memory devices.

Main Methods:

  • Fabrication of MIS and TFT devices with gold source/drain electrodes and aluminum gate electrodes on glass substrates.
  • Incorporation of SWCNTs embedded in poly(methyl methacrylate) (PMMA) as the gate dielectric and floating gate.
  • Characterization of device electrical properties, including capacitance-voltage (C-V), output, and transfer characteristics.

Main Results:

  • SWCNT-based memory devices exhibited significant hysteresis in C-V, output, and transfer characteristics.
  • Both MIS and TFT structures demonstrated reliable and large memory windows with high capacity and reduced charge leakage.
  • Threshold voltage shifts in TFTs and flat-band voltage shifts in MIS structures were observed due to SWCNT floating gate charging/discharging.
  • Low voltage pulses (as low as 1 V) effectively controlled the write and erase states.

Conclusions:

  • SWCNTs are effective as floating gates in organic memory devices, enabling reliable operation.
  • The fabricated SWCNT-based MIS and TFT structures show promise for high-performance organic memory applications.
  • The observed hysteresis and voltage shifts confirm the memory functionality attributed to the SWCNT floating gate.