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Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries
Published on: April 22, 2013
Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe)5(Bi2Se3)3
Xiaochen Ren1, Arunima K Singh2, Lei Fang3,4
1Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208, United States.
Abstract:
Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the tomographic mapping of dopants in layered 2D materials with atomic sensitivity and subnanometer spatial resolution using atom probe tomography (APT). APT analysis shows that Ag dopes both Bi2Se3 and PbSe layers in (PbSe)5(Bi2Se3)3, and correlations in the position of Ag atoms suggest a pairing across neighboring Bi2Se3 and PbSe layers. Density functional theory (DFT) calculations confirm the favorability of substitutional doping for both Pb and Bi and provide insights into the observed spatial correlations in dopant locations.

