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Solution-Processed Organic-Inorganic Perovskite Field-Effect Transistors with High Hole Mobilities
Toshinori Matsushima1,2, Sunbin Hwang1, Atula S D Sandanayaka1,2
1Center for Organic Photonics and Electronics Research, Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan.
Abstract:
A very high hole mobility of 15 cm2 V-1 s-1 along with negligible hysteresis are demonstrated in transistors with an organic-inorganic perovskite semiconductor. This high mobility results from the well-developed perovskite crystallites, improved conversion to perovskite, reduced hole trap density, and improved hole injection by employing a top-contact/top-gate structure with surface treatment and MoOx hole-injection layers.
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